Near-field enhancement of infrared intensities for f-f transitions in Er3+ ions close to the surface of silicon nanoparticles

Journal of Molecular Modeling

Volumn 17, Issue 3, 2011, Pages 423-428

  Borowska, Lesya ^a,b,c   Fritzsche, Stephan ^d   Kik, Pieter G ^a   Masunov, Artëm E ^a  

^a UNIVERSITY OF CENTRAL FLORIDA   (United States)

^b INSTITUTE FOR NUCLEAR RESEARCH   (Ukraine)

^c UNIVERSITY OF BONN   (Germany)

^d GSI HELMHOLTZZENTRUM FÜR SCHWERIONENFORSCHUNG GMBH   (Germany)

Author keywords

Ab initio theory; Erbium doped waveguide amplifiers; Optical gain materials; Spin orbit coupling

Indexed keywords

ERBIUM; NANOPARTICLE; SILICON;

AB INITIO CALCULATION; AMPLIFIER; ARTICLE; DYNAMICS; ELECTRIC FIELD; FIELD EMISSION; PARTICLE RADIATION; POLARIZATION; PRIORITY JOURNAL;

ERBIUM; IONS; NANOPARTICLES; OPTICS AND PHOTONICS; SILICON; SPECTROPHOTOMETRY, INFRARED; SURFACE PROPERTIES; YTTRIUM;

EID: 79954443588     PISSN: 16102940     EISSN: 09485023     Source Type: Journal    
DOI: 10.1007/s00894-010-0708-6     Document Type: Article

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