Sintering temperature dependence of grain boundary resistivity in a rare-earth-doped ZnO varistor

Journal of the American Ceramic Society

Volumn 90, Issue 1, 2007, Pages 291-294

  Cai, Jingnan ^a   Lin, Yuan Hua ^a,c   Li, Ming ^a   Nan, Ce Wen ^a   He, Jinliang ^a   Yuan, Fangli ^b  

^a TSINGHUA UNIVERSITY   (China)

^b INSTITUTE OF PROCESS ENGINEERING   (China)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CERAMIC MATERIALS; ELECTRIC PROPERTIES; GRAIN BOUNDARIES; MICROSTRUCTURE; PERMITTIVITY; SINTERING; ZINC OXIDE;

DIELECTRIC PERMITTIVITY; NONOHMIC ELECTRICAL PROPERTIES; RARE-EARTH OXIDES; SINTERING TEMPERATURE;

RARE EARTH COMPOUNDS;

EID: 33846150678     PISSN: 00027820     EISSN: 15512916     Source Type: Journal    
DOI: 10.1111/j.1551-2916.2006.01338.x     Document Type: Article

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