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Applied Physics Letters

Volumn 98, Issue 13, 2011, Pages

Full band structure calculation of two-photon indirect absorption in bulk silicon

(3) Cheng, J L a,b Rioux, J a Sipe, J E a

a UNIVERSITY OF TORONTO (Canada)

b UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALL-OPTICAL; BOND CHARGE MODELS; BULK SILICON; ENERGY BAND; FULL BAND STRUCTURES; LIMITING EFFECTS; PHONON ASSISTED PROCESS; PHONON DISPERSIONS; PSEUDOPOTENTIALS; SILICON STRUCTURES; TELECOMMUNICATION WAVELENGTHS; TWO PHOTON;

ABSORPTION; BAND STRUCTURE; OPTICAL DATA PROCESSING; PHONONS; PHOTONS;

MULTIPHOTON PROCESSES;

EID: 79953759093 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3570654 Document Type: Article

Times cited : (15)

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