Modeling power semiconductor losses in HEV powertrains using Si and SiC devices

2010 IEEE Vehicle Power and Propulsion Conference, VPPC 2010

Volumn , Issue , 2010, Pages

  Reed, Justin K ^a   McFarland, James ^a   Tangudu, Jagadeesh ^b   Vinot, Emmanuel ^b   Trigui, Rochdi ^a   Venkataramanan, Giri ^a   Gupta, Shiv ^a   Jahns, Thomas ^a  

^a University of Wisconsin Madison   (United States)

^b National Institute of Research on Transport and Safety   (France)

Author keywords

ac dc power conversion; Power electronics; Propulsion; Silicon carbide

Indexed keywords

AC-DC POWER CONVERSION; HIGH POWER APPLICATIONS; HYBRID ELECTRIC VEHICLE; INVERTER EFFICIENCY; LOSS MODEL; MODELING POWER; POTENTIAL BENEFITS; POWER SEMICONDUCTOR DEVICES; SCHOTTKY DIODES; SIC DEVICES; SWITCHING LOSS;

AC GENERATOR MOTORS; AUTOMOBILE ELECTRONIC EQUIPMENT; AUTOMOBILES; DC POWER TRANSMISSION; ELECTRIC VEHICLES; POWER ELECTRONICS; PROPULSION; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SILICON CARBIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79953150570     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VPPC.2010.5729068     Document Type: Conference Paper

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