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Journal of Applied Physics

Volumn 109, Issue 5, 2011, Pages

Stability and electronic structure of hydrogen passivated few atomic layer silicon films: A theoretical exploration

(5) Wang, Shudong a Zhu, Liyan a Chen, Qian a Wang, Jinlan a Ding, Feng b

a SOUTHEAST UNIVERSITY (China)

b HONG KONG POLYTECHNIC UNIVERSITY (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION PEAKS; ATOMIC LAYER; BAND GAPS; BI-LAYER; BULK SILICON; DENSITY FUNCTIONAL THEORY CALCULATIONS; DOUBLE LAYERS; ENERGY REGIONS; EXTERNAL ELECTRIC FIELD; FORMATION ENERGIES; HIGHER ENERGY REGION; HYDROGENATED SILICON; LAYER THICKNESS; SILICON FILMS;

ABSORPTION; DENSITY FUNCTIONAL THEORY; ELECTRIC FIELDS; ELECTRONIC STRUCTURE; ENERGY GAP; HYDROGENATION; METALLIC FILMS; OPTICAL PROPERTIES; PASSIVATION;

CRYSTAL ATOMIC STRUCTURE;

EID: 79953000521 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3553838 Document Type: Article

Times cited : (9)

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