Microstructural, crystal structure and electrical characteristics of shock-consolidated Ga2O3 doped ZnO bulk

Powder Technology

Volumn 208, Issue 3, 2011, Pages 575-581

  Kim, Youngkook ^a   Tomoaki, Ikegami ^a   Itoh, Shigeru ^a  

^a KUMAMOTO UNIVERSITY   (Japan)

Author keywords

Ga2O3 doped ZnO; Grain boundary resistance; Nonlinear current voltage (I V) characteristic; Underwater shock compaction

Indexed keywords

DOPED ZNO; ELECTRICAL CHARACTERISTIC; ELECTRICAL PROPERTY; GRAIN BOUNDARY RESISTANCE; LATTICE DEFECTS; MICRO-STRUCTURAL; NONLINEAR CURRENT; NONLINEAR CURRENT-VOLTAGE (I-V) CHARACTERISTIC; RELATIVE DENSITY; THEORETICAL DENSITY; UNDERWATER SHOCKS; ZNO; ZNO VARISTORS;

COMPACTION; CRYSTAL STRUCTURE; ELECTRIC PROPERTIES; GALLIUM; GRAIN BOUNDARIES; GRAIN GROWTH; GRAIN SIZE AND SHAPE; SINTERING; ZINC OXIDE;

CURRENT VOLTAGE CHARACTERISTICS;

GALLIUM; GALLIUM OXIDE; UNCLASSIFIED DRUG; ZINC OXIDE;

ARTICLE; BULK DENSITY; CERAMICS; COMPRESSION; CONTROLLED STUDY; CRYSTAL STRUCTURE; ELECTRIC CURRENT; ELECTRIC RESISTANCE; MATHEMATICAL MODEL; PRESSURE CHAMBER; REACTION OPTIMIZATION; RELATIVE DENSITY; SHOCK WAVE; STRUCTURE ANALYSIS; X RAY DIFFRACTION;

EID: 79952739827     PISSN: 00325910     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.powtec.2010.12.020     Document Type: Article

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