In-situ observation of bubble formation at silicon meltsilica glass interface

Journal of Crystal Growth

Volumn 318, Issue 1, 2011, Pages 196-199

  Minami, Toshiro ^a,b   Maeda, Susumu ^a,b   Higasa, Mitsuo ^a,b   Kashima, Kazuhiko ^a,b  

^a Nissei Bldg   (Japan)

^b Covalent Silicon Corporation ^*  (Japan)

Author keywords

A1. Bubble; A1. Defects; A2. Czochralski method; A2. Growth from melt; B1. Silica glass; B1. Silicon

Indexed keywords

A1. BUBBLE; A1. DEFECTS; A2. CZOCHRALSKI METHOD; A2. GROWTH FROM MELT; B1. SILICA GLASS; B1. SILICON;

BUBBLE FORMATION; BUBBLES (IN FLUIDS); CRYSTAL DEFECTS; GLASS; SILICA; SILICON; SILICON OXIDES; SINGLE CRYSTALS; VACUUM;

ARGON;

EID: 79952735941     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.10.075     Document Type: Conference Paper

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