Electrical properties of rapid hydrothermal synthesised Al-doped zinc oxide nanowires in flexible electronics

Micro and Nano Letters

Volumn 6, Issue 3, 2011, Pages 147-149

  Shim, Jang Bo ^a   Grant, J W ^a   Harrell, W R ^a   Chang, Hyuk ^b   Kim, Sung O ^a  

^a Clemson University   (United States)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AL-CONCENTRATION; AL-DOPED ZINC OXIDE; AL-DOPED ZNO; BAND GAPS; DOPING EFFECTS; ELECTRICAL PROPERTY; ELECTRICAL RESISTANCES; FLEXIBLE SUBSTRATE; HIGH TRANSMITTANCE; OPTICAL AND ELECTRICAL PROPERTIES; RAPID HYDROTHERMAL SYNTHESIS; VISIBLE WAVELENGTHS; ZNO;

DOPING (ADDITIVES); ELECTRIC PROPERTIES; ELECTRIC RESISTANCE; ELECTRIC WIRE; FLEXIBLE ELECTRONICS; HYDROTHERMAL SYNTHESIS; NANOWIRES; ZINC OXIDE;

ALUMINUM;

ZINC OXIDE;

ARTICLE; ELECTRIC RESISTANCE; PHYSICAL CHEMISTRY; SCANNING ELECTRON MICROSCOPY; SYNTHESIS;

EID: 79952716280     PISSN: None     EISSN: 17500443     Source Type: Journal    
DOI: 10.1049/mnl.2010.0226     Document Type: Article

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