SCOPUS 정보 검색 플랫폼

Nanotechnology

Volumn 22, Issue 16, 2011, Pages

Simulation of ionic current through the nanopore in a double-layered semiconductor membrane

(2) Nikolaev, Alexey a Gracheva, Maria E a

a CLARKSON UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONICAL NANOPORES; ELECTROSTATIC POTENTIAL DISTRIBUTION; ION TRANSPORTS; IONIC CURRENT; LAYERED SEMICONDUCTORS; POLYMER TRANSLOCATION; POTENTIAL VARIATIONS; RECTIFICATION RATIO; SI LAYER;

CYLINDERS (SHAPES); ELECTRIC RECTIFIERS; NANOPORES; SEMICONDUCTING SILICON;

CURRENT VOLTAGE CHARACTERISTICS;

ION; NANOMATERIAL;

ARTICLE; ARTIFICIAL MEMBRANE; CHEMICAL MODEL; CHEMISTRY; COMPUTER SIMULATION; POROSITY; ULTRASTRUCTURE;

COMPUTER SIMULATION; IONS; MEMBRANES, ARTIFICIAL; MODELS, CHEMICAL; NANOSTRUCTURES; POROSITY;

EID: 79952651703 PISSN: 09574484 EISSN: 13616528 Source Type: Journal
DOI: 10.1088/0957-4484/22/16/165202 Document Type: Article

Times cited : (21)

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