Effect of gating and pressure on the electronic transport properties of crossed nanotube junctions: Formation of a Schottky barrier

Journal of Physics Condensed Matter

Volumn 23, Issue 11, 2011, Pages

  Havu, P ^a   Hashemi, M J ^a   Kaukonen, M ^a   Seppala E T ^b   Nieminen, R M ^a  

^a AALTO UNIVERSITY   (Finland)

^b NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO; ATOMIC STRUCTURE; CARBON NANOTUBE JUNCTIONS; CHARGE ACCUMULATION; CHARGE DEPLETION; ELECTRONIC TRANSPORT PROPERTIES; GATE VOLTAGES; NANOTUBE CONTACTS; NANOTUBE FILMS; NANOTUBE JUNCTIONS; SCHOTTKY BARRIERS; SCHOTTKY CONTACTS;

CARBON NANOTUBES; DENSITY FUNCTIONAL THEORY; PRESSURE EFFECTS; SCHOTTKY BARRIER DIODES; STRUCTURAL OPTIMIZATION; TRANSPORT PROPERTIES;

SEMICONDUCTOR JUNCTIONS;

EID: 79952636481     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/23/11/112203     Document Type: Article

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