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Journal of Crystal Growth

Volumn 319, Issue 1, 2011, Pages 44-48

Growth characteristics of Cu(In,Ga)Se2 thin films using 3-stage deposition process with a NaF precursor

(6) Sakdanuphab, R a,b Chityuttakan, C a,b Pankiew, A c Somwang, N c Yoodee, K a,b Chatraphorn, S a,b

a CHULALONGKORN UNIVERSITY (Thailand)

b Thailand Ministry of Science and Technology (Thailand)

c Thai Microelectronics Center TMEC (Thailand)

Author keywords

A3. 3 stage growth process; A3. Cu(In,Ga)Se2; A3. MBD; A3. Na precursor; B3. Solar cell

Indexed keywords

A3. CU(IN,GA)SE2; A3. MBD; A3. NA PRECURSOR; B3.SOLAR CELL; GROWTH PROCESS;

BELT DRIVES; CHEMICAL MODIFICATION; COPPER; DEPOSITION; GALLIUM; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; SEMICONDUCTING SELENIUM COMPOUNDS; SEMICONDUCTOR DOPING; SODIUM; SOLAR CELLS; THIN FILMS; VAPOR DEPOSITION;

FILM GROWTH;

EID: 79952617408 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2011.01.077 Document Type: Article

Times cited : (24)

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