Electronic structures and Eu3+ photoluminescence behaviors in Y2Si2O7 and La2Si2O 7

Journal of Alloys and Compounds

Volumn 509, Issue 15, 2011, Pages 5023-5027

  Zhang, Zhiya ^a   Wang, Yuhua ^a   Zhang, Feng ^a   Cao, Haining ^b  

^a LANZHOU UNIVERSITY   (China)

^b Korea Institute of Science and Technology   (South Korea)

Author keywords

Electronic band structure; La); M2Si2O7: Eu3+ (M = Y; UV VUV photoluminescence

Indexed keywords

DIRECT BAND GAP; ELECTRONIC BAND STRUCTURE; ELECTRONIC STATES DENSITY; ENERGY DISTRIBUTIONS; LA); LINEAR OPTICAL PROPERTIES; M2SI2O7: EU3+ (M = Y; PARTIAL DENSITY OF STATE; UV-VUV PHOTOLUMINESCENCE;

BAND STRUCTURE; ELECTRON MOBILITY; ELECTRONIC PROPERTIES; ELECTRONIC STATES; ELECTRONIC STRUCTURE; EUROPIUM; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SILICON;

LANTHANUM;

EID: 79952537275     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2011.02.039     Document Type: Article

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