Optical characteristics of La-doped ZnS thin films prepared by chemical bath deposition

Chinese Physics Letters

Volumn 28, Issue 2, 2011, Pages

  Xie, Hai Qing ^a   Chen, Yuan ^a   Huang, Wei Qing ^a   Huang, Gui Fang ^a   Peng, Ping ^a   Peng, Li ^a   Wang, Tai Hong ^a   Zeng, Yun ^a  

^a HUNAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; ENERGY GAP; FILM PREPARATION; II-VI SEMICONDUCTORS; PRECIPITATION (CHEMICAL); THIN FILMS; TRANSPARENT ELECTRODES; ZINC SULFIDE;

CHEMICAL BATH DEPOSITION PROCESS; CHEMICAL-BATH DEPOSITION; CO-PRECIPITATION; DOPED ZNS; ENERGY DISPERSIVE X RAY SPECTROSCOPY; ENERGY DISPERSIVE X-RAY SPECTROSCOPY; INORGANIC PRECURSOR; OPTICAL CHARACTERISTICS; PRECIPITATION REACTION; ZNS THIN FILMS;

ENERGY DISPERSIVE SPECTROSCOPY;

EID: 79952463888     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/28/2/027806     Document Type: Article

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