Stability and bias stressing of metal/insulator/metal diodes

IEEE International Integrated Reliability Workshop Final Report

Volumn , Issue , 2010, Pages 80-84

  Alimardani, N ^a   Conley, J F ^a   Cowell III, E W ^a   Wager, J F ^a   Chin, M ^b   Kilpatrick, S ^b   Dubey, M ^b  

^a Oregon State University   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ALUMINUM OXIDE; ATOMIC LAYER DEPOSITION;

ATOMIC-LAYER DEPOSITION; BOTTOM ELECTRODES; DC BIAS; IDEAL BEHAVIOR; INTERFACIAL ROUGHNESS; METAL INSULATOR METALS; MULTI-METALS; PERFORMANCE; TUNNEL DIELECTRICS; WORKING DEVICE;

ELECTRODES;

EID: 79952413325     PISSN: 19308841     EISSN: 23748036     Source Type: Conference Proceeding    
DOI: 10.1109/IIRW.2010.5706491     Document Type: Conference Paper

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