Transconductance and Coulomb blockade properties of in-plane grown carbon nanotube field effect transistors

Nanoscience and Nanotechnology Letters

Volumn 2, Issue 2, 2010, Pages 73-78

  Ai, Nan ^a   Sul, Onejae ^b   Begliarbekov, Milan ^a   Song, Qiang ^a   Kumar, Kitu ^b   Choi, Daniel S ^c   Yang, Eui Hyeok ^b   Strauf, Stefan ^a  

^a Stevens Institute of Technology   (United States)

^b STEVENS INSTITUTE OF TECHNOLOGY   (United States)

^c UNIVERSITY OF IDAHO   (United States)

Author keywords

Carbon Nanotubes; Coulomb Blockade; Field Effect Transistor; Gate Hysteresis; In Plane Growth; Single Electron Transistor

Indexed keywords

CARBON NANOTUBE FIELD EFFECT TRANSISTORS; COMMON GATES; CONDUCTANCE OSCILLATIONS; COULOMB-BLOCKADE REGIME; DEVICE GEOMETRIES; ELECTRICAL BURN; ELECTRON TRANSPORT; GATE HYSTERESIS; IN-PLANE; NANOSCALE CATALYSTS; ON/OFF RATIO; QUANTUM DOT; QUANTUM-ELECTRONIC DEVICES; SINGLE-WALL CARBON NANOTUBES; SWCNT DEVICES; ULTRA-LOW POWER CONSUMPTION;

CAPACITANCE MEASUREMENT; CARBON NANOTUBES; CHEMICAL VAPOR DEPOSITION; COULOMB BLOCKADE; DISPLAY DEVICES; ELECTRIC FIELD EFFECTS; ELECTRON DEVICES; ELECTRON TRAPS; ELECTRONS; FIELD EFFECT TRANSISTORS; HYSTERESIS; QUANTUM CHEMISTRY; QUANTUM ELECTRONICS; SEMICONDUCTOR GROWTH; SINGLE-WALLED CARBON NANOTUBES (SWCN); THERMOELECTRIC EQUIPMENT; TRANSIENTS;

SINGLE ELECTRON TRANSISTORS;

EID: 79952318099     PISSN: 19414900     EISSN: 19414919     Source Type: Journal    
DOI: 10.1166/nnl.2010.1057     Document Type: Article

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