Single step deposition method for nearly stoichiometric CuInSe2 thin films

Thin Solid Films

Volumn 519, Issue 10, 2011, Pages 3107-3112

  Karthikeyan, Sreejith ^a   Hill, Arthur E ^a   Pilkington, Richard D ^a   Cowpe, John S ^a   Hisek, Jörg ^b   Bagnall, Darren M ^c  

^a UNIVERSITY OF SALFORD   (United Kingdom)

^b TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

^c UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

Author keywords

Copper indium diselenide; Energy dispersive X ray analysis; Powder target; Pused DC magnetron sputtering; Solar Cells; Thin films; X ray diffraction

Indexed keywords

AS-GROWN FILMS; AS-GROWN THIN FILMS; COPPER INDIUM DISELENIDE; DEPOSITION METHODS; DEPOSITION PROCESS; DEPOSITION TECHNIQUE; ELECTRICAL PROPERTY; ENERGY DISPERSIVE X-RAY; FOUR POINT PROBE; HIGH QUALITY; HOT POINT; HOT PROBE; LOW RESISTIVITY; MULTI-STEP; NEAR STOICHIOMETRIC; P-TYPE; PACKED GRAINS; POWDER TARGET; PULSED DC MAGNETRON SPUTTERING; PUSED DC MAGNETRON SPUTTERING; RESISTIVITY MEASUREMENT; SECONDARY PHASIS; SINGLE PHASE; SINGLE-STEP; STARTING MATERIALS; SUBSTRATE HEATING;

ATOMIC FORCE MICROSCOPY; COPPER; COPPER COMPOUNDS; DIFFRACTION; ELECTRIC PROPERTIES; INDIUM; MAGNETRON SPUTTERING; MEASUREMENT THEORY; PROBES; REFRACTORY ALLOYS; SCANNING ELECTRON MICROSCOPY; SELENIUM; SEMICONDUCTING SELENIUM COMPOUNDS; SOLAR CELLS; SOLAR ENERGY; THIN FILMS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; X RAYS;

VAPOR DEPOSITION;

EID: 79952311914     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.12.158     Document Type: Article

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