Study on the properties of CuInSe2 ingots grown from the melt using stoichiometric and non-stoichiometric charges

Journal of Crystal Growth

Volumn 280, Issue 3-4, 2005, Pages 474-482

  Lachab, M ^a,c   Attia, A A ^b   Llinares C ^a  

^a UNIVERSITÉ MONTPELLIER II   (France)

^b Roxy   (Egypt)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

A1. Characterization; A2. Growth from melt; B2. Semiconducting ternary compounds

Indexed keywords

COMPOSITION; COPPER COMPOUNDS; INGOTS; POLYCRYSTALS; SEMICONDUCTOR MATERIALS; STOICHIOMETRY; TERNARY SYSTEMS; X RAY DIFFRACTION ANALYSIS;

BANDGAP TERNARY SEMICONDUCTORS; CHALCOPYRITES; COMPOSITIONAL ANALYSIS; SEMICONDUCTING TERNARY COMPOUNDS;

CRYSTAL GROWTH FROM MELT;

EID: 20344397472     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.03.076     Document Type: Article

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