Raman study of Fano interference in p-type doped silicon

Journal of Raman Spectroscopy

Volumn 41, Issue 12, 2010, Pages 1759-1764

  Burke, Brian G ^a   Chan, Jack ^a   Williams, Keith A ^a   Wu, Zili ^b   Puretzky, Alexander A ^b   Geohegan, David B ^b  

^a University of Virginia   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

deep UV; Fano interference; inter valence band transitions; penetration depth; Raman spectroscopy; silicon

Indexed keywords

PHONONS; VALENCE BANDS;

BAND TRANSITIONS; DEEP UV; DOPED SILICON; FANO-INTERFERENCE; INTER-VALENCE BAND TRANSITION; OPTICAL PHONONS; P-TYPE; PENETRATION DEPTH; RAMAN STUDIES; SILICON INDUSTRY;

RAMAN SPECTROSCOPY;

EID: 79952182951     PISSN: 03770486     EISSN: 10974555     Source Type: Journal    
DOI: 10.1002/jrs.2614     Document Type: Article

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