Effect of resistance-area product on spin-transfer switching in MgO-based magnetic tunnel junction memory cells

Applied Physics Letters

Volumn 98, Issue 7, 2011, Pages

  Zeng, Z M ^a   Khalili Amiri, P ^a   Rowlands, G ^b   Zhao, H ^c   Krivorotov, I N ^b   Wang, J P ^c   Katine, J A ^d   Langer, J ^e   Galatsis, K ^a   Wang, K L ^a   Jiang, H W ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c University of Minnesota   (United States)

^d SAN JOSE RESEARCH CENTER   (United States)

^e Singulus Technologies   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DRIVES; CURRENT INDUCED SWITCHING; ENERGY-PER-BIT; MAGNETIC TUNNEL JUNCTION; MAGNETORESISTIVE RANDOM ACCESS MEMORIES; MEMORY CELL; RESISTANCE-AREA PRODUCTS; SPIN-TRANSFER SWITCHING; SWITCHING CURRENT DENSITY; SWITCHING TIME; ULTRA-FAST;

MAGNETIC STORAGE; SWITCHING; TUNNEL JUNCTIONS;

MRAM DEVICES;

EID: 79951926034     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3556615     Document Type: Article

References (17)

1. J. C. Slonczewski, J. Magn. Magn. Mater. 0304-8853 159, L1 (1996). 10.1016/0304-8853(96)00062-5
2. L. Berger, Phys. Rev. B 0556-2805 54, 9353 (1996). 10.1103/PhysRevB.54. 9353
3. S. Ikeda, J. Hayakawa, Y. M. Lee, F. Matsukura, Y. Ohno, T. Hanyu, and H. Ohno, IEEE Trans. Electron Devices 0018-9383 54, 991 (2007). 10.1109/TED.2007.894617 (Pubitemid 46691554)
4. S. Assefa, J. Nowak, J. Z. Sun, E. O'Sullivan, S. Kanakasabapathy, W. J. Gallagher, Y. Nagamine, K. Tsunekawa, D. D. Djayaprawira, and N. Watanabe, J. Appl. Phys. 0021-8979 102, 063901 (2007). 10.1063/1.2781321 (Pubitemid 47508956)
5. E. Chen, D. Apalkov, Z. Diao, A. Driskill-Smith, D. Druist, D. Lottis, V. Nikitin, X. Tang, S. Watts, S. Wang, S. A. Wolf, A. W. Ghosh, J. W. Lu, S. J. Poon, M. Stan, W. H. Butler, S. Gupta, C. K. A. Mewes, T. Mewes, and P. B. Visscher, IEEE Trans. Magn. 0018-9464 46, 1873 (2010). 10.1109/TMAG.2010.2042041
6. J. A. Katine, F. J. Albert, R. A. Buhrman, E. B. Myers, and D. C. Ralph, Phys. Rev. Lett. 0031-9007 84, 3149 (2000). 10.1103/PhysRevLett.84.3149
7. Y. Huai, F. Albert, P. Nguyen, M. Pakala, and T. Valet, Appl. Phys. Lett. 0003-6951 84, 3118 (2004). 10.1063/1.1707228
8. S. Yuasa, A. Fukushima, Y. Suzuki, and K. Ando, Nature Mater. 1476-1122 3, 868 (2004). 10.1038/nmat1257
9. S. S. P. Parkin, C. Kaiser, A. Panchula, P. M. Rice, B. Hughes, M. Samant, and S. -H. Yang, Nature Mater. 1476-1122 3, 862 (2004). 10.1038/nmat1256
10. T. Aoki, Y. Ando, D. Watanabe, M. Oogane, and T. Miyazaki, J. Appl. Phys. 0021-8979 103, 103911 (2008). 10.1063/1.2930873 (Pubitemid 351776509)
11. Z. Diao, Z. Li, S. Wang, Y. Ding, A. Panchula, E. Chen, L. Wang, and Y. Huai, J. Phys.: Condens. Matter 0953-8984 19, 165209 (2007). 10.1088/0953-8984/19/16/165209 (Pubitemid 46595090)
12. P. Khalili Amiri, Z. M. Zeng, P. Upadhyaya, G. Rowlands, H. Zhao, I. N. Krivorotov, J. -P. Wang, H. W. Jiang, J. A. Katine, J. Langer, K. Galatsis, and K. L. Wang, IEEE Electron Device Lett. 0741-3106 32, 57 (2011). 10.1109/LED.2010.2082487
13. Z. M. Zeng, K. H. Cheung, H. W. Jiang, I. N. Krivorotov, J. A. Katine, V. Tiberkevich, and A. Slavin, Phys. Rev. B 0556-2805 82, 100410 (R) (2010). 10.1103/PhysRevB.82.100410
14. J. Z. Sun, Phys. Rev. B 0556-2805 62, 570 (2000). 10.1103/PhysRevB.62.570
15. Y. Tserkovnyak and A. Brataas, Phys. Rev. B 0556-2805 66, 224403 (2002). 10.1103/PhysRevB.66.224403
16. Y. Huai, M. Pakala, Z. Diao, and Y. Ding, Appl. Phys. Lett. 0003-6951 87, 222510 (2005). 10.1063/1.2138363 (Pubitemid 41669247)
17. A. Brataas, Y. V. Nazarov, and G. E. W. Bauer, Phys. Rev. Lett. 0031-9007 84, 2481 (2000). 10.1103/PhysRevLett.84.2481