Physical properties of highly uniform InGaAs pyramidal quantum dots with GaAs barriers: Fine structure splitting in pre-patterned substrates

Superlattices and Microstructures

Volumn 49, Issue 3, 2011, Pages 279-282

  Mereni, L O ^a   Dimastrodonato, V ^a   Juska, G ^a   Pelucchi, E ^a  

^a UNIVERSITY COLLEGE CORK   (Ireland)

Author keywords

Fine structure splitting; InGaAs dot; MOVPE; Site controlled quantum dots; Small inhomogeneous broadening; Spectral purity

Indexed keywords

FINE STRUCTURE SPLITTING; INGAAS DOT; INHOMOGENEOUS BROADENING; MOVPE; SITE-CONTROLLED QUANTUM DOTS; SPECTRAL PURITY;

GALLIUM ALLOYS; GALLIUM ARSENIDE; MAGNETIC FIELDS; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM;

SEMICONDUCTOR QUANTUM DOTS;

EID: 79951850894     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2010.06.011     Document Type: Conference Paper

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