Application of wide-bandgap hydrogenated amorphous silicon oxide layers to heterojunction solar cells for high quality passivation

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2008, Pages

  Mueller, Thomas ^a   Schwertheim, Stefan ^a   Fahrner, Wolfgang R ^a  

^a UNIVERSITY OF HAGEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE SILICONS; HETEROJUNCTION CELLS; HETEROJUNCTION SOLAR CELLS; LOW DEPOSITION TEMPERATURE; PHOTOCONDUCTANCE LIFETIME MEASUREMENTS; PLASMA DECOMPOSITION; QUASI-STEADY-STATE PHOTOCONDUCTANCE; SURFACE RECOMBINATION VELOCITIES;

AMORPHOUS FILMS; CARBON DIOXIDE; HETEROJUNCTIONS; HYDROGENATION; OPEN CIRCUIT VOLTAGE; PASSIVATION; SEMICONDUCTOR DOPING; SILICON; SILICON OXIDES; SOLAR CELLS;

AMORPHOUS SILICON;

EID: 79951849919     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2008.4922792     Document Type: Conference Paper

References (6)

1. E. Maruyama et al., "Sanyo's Challenges to the Development of High-efficiency HIT Solar Cells and the Expansion of HIT Business", 4th IEEE World Conference on Photovoltaic Energy Conversion, 2006, p. 1455.
2. T. Mueller et al., "High Quality passivation for heterojunction solar cells by hydrogenated amorphous silicon suboxide films", Appl. Phys. Lett. 92, 2008, p. 033504.
3. M. J. Kerr et al., "Very low bulk and surface recombination in oxidized silicon wafers", Semicon. Sci. Tech. 17, 2002, pp. 35-38.
4. M. J. Kerr et al., "Recombination at the interface between silicon and stoichiometric plasma silicon nitride", Semicon. Sci. Tech. 17, 2002, pp. 166-172.
5. T. Mueller et al., "Investigation of the emitter band gap widening of heterojunction solar cells by use of hydrogenated amorphous carbon silicon alloys", J. Appl. Phys. 102, 2007, 074505.
6. S. De Wolf et al., "Surface passivation properties of boron-doped plasma-enhanced chemical vapor deposited hydrogenated amorphous silicon films on p-type crystalline Si substrates", J. Appl. Phys. 88, 2006, 022104.