Numerical analysis of typical STT-MTJ stacks for 1T-1R memory arrays

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2010, Pages

  Augustine, C ^a,b   Raychowdhury, A ^a   Somasekhar, D ^a   Tschanz, J ^a   Roy, K ^b   De, Vivek K ^a  

^a INTEL CORPORATION   (United States)

^b PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CELL DENSITY; COMPREHENSIVE STUDIES; EMBEDDED MEMORIES; FREE LAYERS; MEMORY ARRAY; MEMORY PERFORMANCE; SCALED TECHNOLOGIES; STRAY FIELD; SYNTHETIC ANTIFERROMAGNETS; THERMAL DISTURBANCE;

ANTIFERROMAGNETIC MATERIALS; NUMERICAL ANALYSIS;

ELECTRON DEVICES;

EID: 79951849381     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2010.5703416     Document Type: Conference Paper

References (5)

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2. Z. Diao, Z. Li, S. Wang, Y. Ding, A. Panchula, E. Chen, L. Wang and Y. Huai, "Spin-transfer torque switching in magnetic tunnel junctions and spintransfer torque random access memory," J. Phys.: Condens. Matter 19, 165209, 2007.
3. Y. Saitoa, H. Sugiyamaa, T. Inokuchia, and K. Inomatab, "Interlayer exchange coupling dependence of thermal stability parameters in synthetic antiferromagnetic free layers," J. Mag & Mag Materials, 303, pp.34-38, 2006.
4. Y. Chen, Y. Wang, Y. Wang, C. Lin, US Patent 20090303779, 2009.
5. S. Salahuddin, D. Datta, P. Srivastava, and S. Datta, "Quantum transport simulation of tunneling based spin torque transfer (STT) devices: Design tradeoffs and torque efficiency," International Electron Device Meeting, pp. 121-124, 2007.