Formation of 3D Ge quantum dots array for advanced photovolatics in layer-cake technique

2010 10th IEEE Conference on Nanotechnology, NANO 2010

Volumn , Issue , 2010, Pages 924-927

  Chien, C Y ^a   Chang, Y R ^a   Chang, R N ^a   Lee, M S ^a   Li, P W ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

GE CONTENT; GE QUANTUM DOT; GROWTH METHOD; INTERNAL STRUCTURE; PHOTO-VOLTAIC EFFICIENCY; POLY-SI; POLY-SIGE; PROCESSING CONDITION; QD ARRAYS; QUANTUM DOTS; SPATIAL DENSITIES; THERMAL OXIDATION;

GERMANIUM; NANOTECHNOLOGY; OPTICAL PROPERTIES; OPTICAL WAVEGUIDES; OPTIMIZATION; OXIDATION; PHOTONIC DEVICES; THREE DIMENSIONAL;

SEMICONDUCTOR QUANTUM DOTS;

EID: 79951844205     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NANO.2010.5697842     Document Type: Conference Paper

References (5)

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