Effects of Bi doping on the thermoelectric properties of Β-Zn 4 Sb3

Journal of Applied Physics

Volumn 109, Issue 3, 2011, Pages

  Qin, X Y ^a   Liu, M ^a   Pan, L ^a   Xin, H X ^a   Sun, J H ^a   Wang, Q Q ^a  

^a INSTITUTE OF SOLID STATE PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BI-DOPED; BI-DOPING; ELECTRICAL RESISTIVITY; EXPERIMENTAL OBSERVATION; FIGURE OF MERIT; FIRST PRINCIPLE CALCULATIONS; LOW TEMPERATURES; THERMOELECTRIC PERFORMANCE; THERMOELECTRIC PROPERTIES;

CARRIER CONCENTRATION; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; THERMAL CONDUCTIVITY; THERMOELECTRIC EQUIPMENT; THERMOELECTRICITY; ZINC;

BISMUTH COMPOUNDS;

EID: 79951843074     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3544479     Document Type: Article

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