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Volumn , Issue , 2010, Pages 221-222

Radio frequency readout of electrically detected magnetic resonance in phosphorus-doped silicon MOSFETs

Author keywords

[No Author keywords available]

Indexed keywords

BIASING CONDITIONS; ELECTRICALLY DETECTED MAGNETIC RESONANCES; FIELD-EFFECT; HIGH BANDWIDTH; HYPERFINE LINES; LIQUID HELIUM TEMPERATURE; METAL-OXIDE; MOS-FET; MOSFETS; PHOSPHORUS-DOPED; RADIO FREQUENCIES; REFLECTOMETRY; SPIN RESONANCE; TIME-RESOLVED DETECTION;

EID: 79951746075     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/COMMAD.2010.5699750     Document Type: Conference Paper
Times cited : (1)

References (2)
  • 1
    • 50249118134 scopus 로고    scopus 로고
    • Broadband electrically detected magnetic resonance of phosphorus donors in a silicon field-effect transistor
    • August
    • L. H. Willems van Beveren, H. Huebl, D. R. McCamey, T. Duty, A. J. Ferguson, R. G. Clark, and M. S. Brandt, "Broadband electrically detected magnetic resonance of phosphorus donors in a silicon field-effect transistor", Appl. Phys. Lett. 93, pp. 0721021-3, August 2008.
    • (2008) Appl. Phys. Lett. , vol.93 , pp. 0721021-0721023
    • Willems Van Beveren, L.H.1    Huebl, H.2    McCamey, D.R.3    Duty, T.4    Ferguson, A.J.5    Clark, R.G.6    Brandt, M.S.7


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.