Optical properties of thermally evaporated Bi2Se3 thin films treated with AgNO3 solution

Surface and Coatings Technology

Volumn 205, Issue 12, 2011, Pages 3553-3558

  Sakr, G B ^a   Yahia, I S ^a   El Komy, G M ^b   Salem, A M ^b  

^a Ain Shams University   (Egypt)

^b NATIONAL RESEARCH CENTRE   (Egypt)

Author keywords

Ag doped bismuth selenide; Optical properties; Thin films; X ray diffraction

Indexed keywords

ABSORPTION REGION; ARGON ATMOSPHERES; BISMUTH SELENIDE; CLEAN GLASS SUBSTRATES; DEPOSITED FILMS; DISPERSION RELATIONS; DURATION TIME; EFFECTIVE MASS; HIGH-FREQUENCY DIELECTRICS; OPTICAL PARAMETER; OPTICAL TRANSMISSIONS; OSCILLATOR STRENGTHS; REFLECTION SPECTRA; REFRACTIVE INDEX DISPERSION; SILVER NITRATE SOLUTIONS; STRUCTURAL DETERMINATION; THERMAL EVAPORATION TECHNIQUE; WAVELENGTH RANGES;

BISMUTH; CARRIER CONCENTRATION; DIFFRACTION; DISPERSION (WAVES); FILM PREPARATION; LIGHT REFRACTION; LIGHT TRANSMISSION; ORGANIC POLYMERS; REFRACTIVE INDEX; REFRACTOMETERS; SEMICONDUCTING SELENIUM COMPOUNDS; SILVER; SUBSTRATES; THERMAL EVAPORATION; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAYS;

OPTICAL FILMS;

EID: 79951723912     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2010.12.013     Document Type: Article

References (32)

1. Krbal M., Wagner T., Kohoutek T., Vlcek Mir., Vlcek Mil., Frumar M. J. Optoelectron. Adv. Mater. 2003, 5:1147.
2. Wagner T., Dale G., Ewen P.J.S., Owen A.E., Perina V. J. Appl. Phys. 2000, 87:7758.
3. Wagner T., Frumar M., Kapas S.O., Vlcek Mir., Vlcek Mil. J. Optoelectron. Adv. Mater. 2001, 3:227.
4. Tripathi S.K., Anup T., Singh G., Sharma J., Vineet S., Singh K.P., Saini G.S.S., Goyal N. J. Mater. Sci. 2006, 41:1847.
5. Hajto E., Ewen P.J.S., Belford R.E., Owen A.E. Thin Solid Films 1991, 200:229.
6. Ohta T. J. Optoelectron. Adv. Mater. 2001, 3:609.
7. Wagner T., Jilkova R., Frumar M., Vicek M. Int. J. Electron. 1994, 77:185.
8. Kawaguchi T., Maruno S., Elliott S.R. J. Appl. Phys. 1996, 79:9096.
9. Chang Y.Y., Chou L.H. Jpn. J. Appl. Phys. 2 2000, 39(4A):294.
10. Bhattacharya R.N., Pramanik P. J. Electrochem. Soc. 1982, 129:332.
11. Bates C.W., England L. Appl. Phys. Lett. 1996, 14:390.
12. Hyun D.B., Hwang J.S., Oh T.S., Shim J.D., Kolomoets N.V. J. Phys. Chem. Solids 1998, 59:1039.
13. Augustine S., Ampili S., Jeungkukang, Mathai Elizabeth Mater. Res. Bull. 2005, 40:1314.
14. Waters J., Crouch D., O'Brien P., Park J.-H. J. Mater. Sci. Mater. Electron. 2003, 14:599.
15. Biljana P., Ivan G. Thin Solid Films 2002, 408:6.
16. Sankapal B.R., Mane R.S., Lonkhande C.D. Mater. Chem. Phys. 2000, 63:230.
17. Al Bayaz A., Giani A., Al Khalfioui M., Foucaran A., Pascal-Delannoy F., Boyer A. J. Cryst. Growth 2003, 258:135.
18. Goswami A., Koli S.S. Indian J. Pure Appl. Phys. 1968, 7:166.
19. Yang J., Chen R., Fan X., Bao S., Zhu W. J. Alloy. Comp. 2006, 407:330.
20. Muneeb U.R., Aqili A.K.S., Shafique M., Ali Z., Maqsood A., Kazmi A. J. Mater. Sci. Lett. 2003, 22:127.
21. Berming P.H. Physics of Thin Films, Vol. 1 1967, 69. Academic, New York. G. Hass (Ed.).
22. Donovan T.M., Spicer W.E., Bennett J.M., Ashley E.J. Phys. Rev. B 1970, 2:397.
23. Born M., Wolf E. Principles of Optics 1970, Pergamon, Oxford.
24. Moss T.S., Burrell G.J., Ellis B. Semiconductor Opto-Electronics 1973, Butterworths, London.
25. DiDomenico M., Wemple S.H. J. Appl. Phys. 1969, 40:720.
26. Spitzer W.G., Fan H.Y. Phys. Rev. 1957, 106.
27. Qasrawi A.F., Shukri Ahmad M.M. Cryst. Res. Technol. 2006, 41:364.
28. Pankove J.I. Optical Process in Semiconductors 1971, Dover Publications Inc, New York.
29. Devos I.J., Fourcade J.O., Jumas J.C., Lavela P. Phys. Rev. B 2000, 61:3110.
30. Singh J. Semiconductor Devices 1994, McGraw-Hill Inc., London, p. 109.
31. Patel T.H., Vaidya R., Patel S.G. J. Cryst. Growth 2003, 253:52.
32. Lide D.R. CRC Handbook of Physics and Chemistry 990-1991, CRC press, Boca Raton, FL. 71st ed.