Evolution of the surface morphology of rubrene under ambient conditions

Applied Physics Letters

Volumn 98, Issue 5, 2011, Pages

  Thompson, R J ^a,b   Yadin, B ^a   Grout, Z J ^a   Hudziak, S ^b   Kloc, C L ^c   Mitrofanov, O ^a,b   Curson, N J ^a,b  

^a LONDON CENTRE FOR NANOTECHNOLOGY   (United Kingdom)

^b UNIVERSITY COLLEGE LONDON   (United Kingdom)

^c NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIENT CONDITIONS; AMBIENT ENVIRONMENT; BAND-BENDING EFFECTS; CLEAVED SURFACES; MOLECULAR REORGANIZATIONS; NANO SCALE; RUBRENES; STEP EDGE;

ATOMIC FORCE MICROSCOPY; FIELD EFFECT TRANSISTORS; MORPHOLOGY; SINGLE CRYSTALS;

SURFACE MORPHOLOGY;

EID: 79951503465     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3551624     Document Type: Article

References (19)

1. V. Coropceanu, J. Cornil, D. da Silva Filho, Y. Olivier, R. Silbey, and J. Bredas, Chem. Rev. (Washington, D.C.) 0009-2665 107, 926 (2007). 10.1021/cr050140x (Pubitemid 46736532)
2. J. Takeya, M. Yamagishi, Y. Tominari, R. Hirahara, Y. Nakazawa, T. Nishikawa, T. Kawase, T. Shimoda, and S. Ogawa, Appl. Phys. Lett. 0003-6951 90, 102120 (2007). 10.1063/1.2711393 (Pubitemid 46398440)
3. V. Podzorov, E. Menard, A. Borissov, V. Kiryukhin, J. Rogers, and M. Gershenson, Phys. Rev. Lett. 0031-9007 93, 086602 (2004). 10.1103/PhysRevLett. 93.086602
4. K. Zhang, K. Tan, C. Zou, M. Wikberg, L. McNeil, S. Mhaisalkar, and C. Kloc, Org. Electron. 1566-1199 11, 1928 (2010). 10.1016/j.orgel.2010.08.019
5. H. Najafov, B. Lee, Q. Zhou, L. Feldman, and V. Podzorov, Nature Mater. 1476-1122 9, 938 (2010). 10.1038/nmat2872
6. L. Miozzo, A. Yassar, and G. Horowitz, J. Mater. Chem. 0959-9428 20, 2513 (2010). 10.1039/b922385a
7. B. Lee, T. Choi, S. Cheong, and V. Podzorov, Adv. Funct. Mater. 1616-301X 19, 3726 (2009). 10.1002/adfm.200901525
8. A. Maliakal, J. Chen, W. So, S. Jockusch, B. Kim, M. Ottaviani, A. Modelli, N. Turro, C. Nuckolls, and A. Ramirez, Chem. Mater. 0897-4756 21, 5519 (2009). 10.1021/cm902699s
9. O. Mitrofanov, D. Lang, C. Kloc, J. Wikberg, T. Siegrist, W. So, M. Sergent, and A. Ramirez, Phys. Rev. Lett. 0031-9007 97, 166601 (2006). 10.1103/PhysRevLett.97.166601 (Pubitemid 44611099)
10. O. Mitrofanov, C. Kloc, T. Siegrist, D. Lang, W. So, and A. Ramirez, Appl. Phys. Lett. 0003-6951 91, 212106 (2007). 10.1063/1.2815939 (Pubitemid 350159044)
11. X. Song, L. Wang, Q. Fan, Y. Wu, H. Wang, C. Liu, N. Liu, J. Zhu, D. Qi, X. Gao, and A. T. S. Wee, Appl. Phys. Lett. 0003-6951 97, 032106 (2010). 10.1063/1.3466914
12. C. Krellner, S. Haas, C. Goldmann, K. Pernstich, D. Gundlach, and B. Batlogg, Phys. Rev. B 0556-2805 75, 245115 (2007). 10.1103/PhysRevB.75.245115
13. M. Kytka, A. Gerlach, F. Schreiber, and J. Kovac, Appl. Phys. Lett. 0003-6951 90, 131911 (2007). 10.1063/1.2717561 (Pubitemid 46516855)
14. C. Kloc, K. Tan, M. Toh, K. Zhang, and Y. Xu, Appl. Phys. A: Mater. Sci. Process. 0947-8396 95, 219 (2009). 10.1007/s00339-008-5014-0
15. R. Laudise, C. Kloc, P. Simpkins, and T. Siegrist, J. Cryst. Growth 0022-0248 187, 449 (1998). 10.1016/S0022-0248(98)00034-7
16. T. Minato, H. Aoki, H. Fukidome, T. Wagner, and K. Itaya, Appl. Phys. Lett. 0003-6951 95, 093302 (2009). 10.1063/1.3184770
17. E. Menard, A. Marchenko, V. Podzorov, M. Gershenson, D. Fichou, and J. Rogers, Adv. Mater. 0935-9648 18, 1552 (2006). 10.1002/adma.200502569 (Pubitemid 43979518)
18. Y. Wakabayashi, J. Takeya, and T. Kimura, Phys. Rev. Lett. 0031-9007 104, 066103 (2010). 10.1103/PhysRevLett.104.066103
19. S. Machida, Y. Nakayama, S. Duhm, Q. Xin, A. Funakoshi, N. Ogawa, S. Kera, N. Ueno, and H. Ishii, Phys. Rev. Lett. 0031-9007 104, 156401 (2010). 10.1103/PhysRevLett.104.156401