Electrical behaviors for growth of LAST alloys using vapor phase deposition

Journal of Alloys and Compounds

Volumn 509, Issue 10, 2011, Pages 4089-4091

  Chang, Mu Li ^a   Jeng, Ming Shan ^a   Chou, Ya Wen ^a   Ku, Jie Ren ^a   Chen, Bin Hao ^a  

^a INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

LAST; Thermoelectric; Vapor phase deposition

Indexed keywords

AG DOPING; ATOMIC RATIO; COMPONENT CONCENTRATION; DEPOSITION TEMPERATURES; ELECTRICAL BEHAVIORS; ELECTRICAL CHARACTERISTIC; ELECTRICAL CONDUCTIVITY; ELECTRICAL PERFORMANCE; EXPERIMENTAL DATA; HIGH DEPOSITION TEMPERATURE; LAST; LEAD ANTIMONY SILVER TELLURIUMS; P-TYPE; SB DOPING; TEST RESULTS; THERMOELECTRIC; VAPOR PHASE DEPOSITION; WELL-DISPERSED;

ALLOYS; ANTIMONY; CARRIER CONCENTRATION; DEPOSITION; ELECTRIC CONDUCTIVITY; LEAD; ORGANIC POLYMERS; SILVER ALLOYS; TELLURIUM; TELLURIUM COMPOUNDS; VAPOR PHASE EPITAXY; VAPORS;

SILVER;

EID: 79851509270     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2010.06.005     Document Type: Article

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