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Volumn 316, Issue 1, 2011, Pages 1-5
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Effects of chlorine drag on the annealing-induced abnormal grain growth in polycrystalline CdTe
a
CEA GRENOBLE
(France)
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Author keywords
A1. Growth models; A1. Recrystallization; A1. Thermal annealing; A3. Physical vapor deposition processes; B2. Semiconducting IIVI materials
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Indexed keywords
A1. RECRYSTALLIZATION;
A1. THERMAL ANNEALING;
A3. PHYSICAL VAPOR DEPOSITION PROCESSES;
GROWTH MODELS;
SEMICONDUCTING II-VI MATERIALS;
ACTIVATION ENERGY;
ANNEALING;
CADMIUM ALLOYS;
CADMIUM COMPOUNDS;
CHLORINE;
DRAG;
GRAIN BOUNDARIES;
GRAIN SIZE AND SHAPE;
GROWTH KINETICS;
PHYSICAL VAPOR DEPOSITION;
RECRYSTALLIZATION (METALLURGY);
SEMICONDUCTOR GROWTH;
GRAIN GROWTH;
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EID: 79551686135
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2010.11.156 Document Type: Article |
Times cited : (7)
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References (21)
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