Growth and characterization of electrically pumped red-emitting VCSEL with embedded InP/AlGaInP quantumdots

Journal of Crystal Growth

Volumn 315, Issue 1, 2011, Pages 131-133

  Eichfelder, M ^a   Schulz, W M ^a   Reischle, M ^a   Wiesner, M ^a   Rossbach R ^a   Jetter, M ^a   Michler, P ^a  

^a UNIVERSITY OF STUTTGART   (Germany)

Author keywords

A3. MOVPE; A3. Quantum dots; B2. Semiconducting indium phosphide; B3. Laser diodes

Indexed keywords

B2. SEMICONDUCTING INDIUM PHOSPHIDE; B3. LASER DIODES; ELECTRICAL CURRENT; ELECTRICALLY PUMPED; INP QUANTUM DOTS; LASER LIGHT EMISSION; MICROCAVITY STRUCTURES; MOVPE; OXIDE APERTURE; QUANTUM DOT; QUANTUM DOTS; ROOM TEMPERATURE LASING; SELF-ASSEMBLED; SEMICONDUCTOR LASER PROCESSING; SPECTRAL RANGE; STAND -ALONE; TRANSVERSE MODE; ULTRA-LOW THRESHOLD; VERTICAL-CAVITY SURFACE EMITTING LASER;

ALUMINUM GALLIUM ARSENIDE; DBR LASERS; INDIUM PHOSPHIDE; LASERS; OPTICAL WAVEGUIDES; PUMPING (LASER); SEMICONDUCTING INDIUM; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DIODES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; SURFACE EMITTING LASERS;

QUANTUM DOT LASERS;

EID: 79551685147     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.09.073     Document Type: Article

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