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Volumn 98, Issue 4, 2011, Pages

Limiting performance analysis of cascaded interband/intersubband thermophotovoltaic devices

Author keywords

[No Author keywords available]

Indexed keywords

DESIGN FLEXIBILITY; ELECTRICAL POWER; FUNDAMENTAL LIMITATIONS; INCIDENT RADIATION; INP; INTER-SUBBAND; INTERBAND; LIMITING PERFORMANCE; MONOLITHICALLY INTEGRATED; NUMERICAL SIMULATION; OPTIMAL CURRENT; P-N JUNCTION; PHOTO DETECTION; QUANTUM CASCADE STRUCTURES; THERMOPHOTOVOLTAIC DEVICES; THERMOPHOTOVOLTAICS;

EID: 79551624177     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3548672     Document Type: Article
Times cited : (21)

References (14)
  • 4
    • 35348908948 scopus 로고    scopus 로고
    • GaAsNInAsN superlattice based multijunction thermophotovoltaic devices
    • DOI 10.1063/1.2785014
    • L. Bhusal and A. Freundlich, J. Appl. Phys. 0021-8979 102, 074907 (2007). 10.1063/1.2785014 (Pubitemid 47587900)
    • (2007) Journal of Applied Physics , vol.102 , Issue.7 , pp. 074907
    • Bhusal, L.1    Freundlich, A.2
  • 8
    • 75249087895 scopus 로고    scopus 로고
    • 1094-4087, 10.1364/OE.18.001618
    • J. Yin and R. Paiella, Opt. Express 1094-4087 18, 1618 (2010). 10.1364/OE.18.001618
    • (2010) Opt. Express , vol.18 , pp. 1618
    • Yin, J.1    Paiella, R.2
  • 10
    • 58849107199 scopus 로고    scopus 로고
    • The individual well and barrier layers here are under compressive and tensile strain, respectively, by less than 1.7%. This is smaller than the individual-layer strain of the In0.7 Ga0.3 As/ AlAs0.8 Sb0.2 QWs strain-compensated on InP that have already been used to demonstrate high-performance QC lasers, in, e.g., 0003-6951, 10.1063/1.3073865
    • The individual well and barrier layers here are under compressive and tensile strain, respectively, by less than 1.7%. This is smaller than the individual-layer strain of the In0.7 Ga0.3 As/ AlAs0.8 Sb0.2 QWs strain-compensated on InP that have already been used to demonstrate high-performance QC lasers, in, e.g., S. Y. Zhang, D. G. Revin, J. W. Cockburn, K. Kennedy, A. B. Krysa, and M. Hopkinson, Appl. Phys. Lett. 0003-6951 94, 031106 (2009). 10.1063/1.3073865
    • (2009) Appl. Phys. Lett. , vol.94 , pp. 031106
    • Zhang, S.Y.1    Revin, D.G.2    Cockburn, J.W.3    Kennedy, K.4    Krysa, A.B.5    Hopkinson, M.6
  • 11
    • 79551627802 scopus 로고    scopus 로고
    • note
    • c is estimated to be about 0.80 eV, as determined by the difference between the X-valley minima in the AlAs0.65 Sb0.35 barriers and the -valley minimum in the In0.83 Ga0.17 As wells. At the same time, the threshold for interband absorption in all the QC structures designed in this work is larger than the bandgap energy of 0.6 eV of the underlying In0.67 Ga0.33 As p-n junction.
  • 14
    • 0003685375 scopus 로고    scopus 로고
    • edited by O. Madelung (Springer, Berlin)
    • Semiconductors-Basic Data, edited by, O. Madelung, (Springer, Berlin, 1996).
    • (1996) Semiconductors-Basic Data


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.