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The individual well and barrier layers here are under compressive and tensile strain, respectively, by less than 1.7%. This is smaller than the individual-layer strain of the In0.7 Ga0.3 As/ AlAs0.8 Sb0.2 QWs strain-compensated on InP that have already been used to demonstrate high-performance QC lasers, in, e.g., 0003-6951, 10.1063/1.3073865
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c is estimated to be about 0.80 eV, as determined by the difference between the X-valley minima in the AlAs0.65 Sb0.35 barriers and the -valley minimum in the In0.83 Ga0.17 As wells. At the same time, the threshold for interband absorption in all the QC structures designed in this work is larger than the bandgap energy of 0.6 eV of the underlying In0.67 Ga0.33 As p-n junction.
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