A pn heterojunction diode constructed with a n -type ZnO nanowire and a p -type HgTe nanoparticle thin film

Applied Physics Letters

Volumn 94, Issue 4, 2009, Pages

  Seong, Hojun ^a   Cho, Kyoungah ^a   Kim, Sangsig ^a  

^a Korea University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DIODES; DISTILLATION; NANOPARTICLES; NANOWIRES; PHOTOCURRENTS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DIODES; SILICON COMPOUNDS; THIN FILM DEVICES; THIN FILMS; ZINC OXIDE;

OHMIC CHARACTERISTICS; OPTOELECTRONIC CHARACTERISTICS; P TYPES; P-N HETEROJUNCTIONS; RECTIFYING CHARACTERISTICS; SI SUBSTRATES; ZNO; ZNO NANOWIRES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 59349092026     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3067861     Document Type: Article

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