Efficiency enhancement in organic light-emitting devices with a magnetic doped hole-transport layer

IEEE Photonics Journal

Volumn 3, Issue 1, 2011, Pages 26-30

  Zhang, Dan Dan ^a   Feng, Jing ^a   Wang, Hai ^a   Liu, Yue Feng ^a   Chen, Lu ^a   Jin, Yu ^a   Zhong, Yu Qing ^a   Bai, Yu ^a   Chen, Qi Dai ^a   Sun, Hong Bo ^a  

^a JILIN UNIVERSITY   (China)

Author keywords

magnetic dopant; magnetic field effects; Organic light emitting devices (OLEDs)

Indexed keywords

CURRENT DENSITY; EFFICIENCY; ELECTROLUMINESCENCE; HOLE MOBILITY; LIGHT; LIGHT EMISSION; MAGNETIC FIELD EFFECTS;

APPLIED MAGNETIC FIELDS; CURRENT EFFICIENCY; EFFICIENCY ENHANCEMENT; HOLE TRANSPORT LAYERS; MAGNETIC DOPANTS; ORGANIC LIGHT-EMITTING DEVICES; ORGANIC MAGNETORESISTANCE; TRIS(8-HYDROXYQUINOLINE) ALUMINUM;

ORGANIC LIGHT EMITTING DIODES (OLED);

EID: 79251630264     PISSN: 19430655     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOT.2010.2098435     Document Type: Article

References (23)

1. H. Kanno, Y. Hamada, and H. Takahashi, BDevelopment of OLED with high stability and luminance efficiency by codoping methods for full color displays,[ IEEE J. Sel. Topics Quantum Electron., vol. 10, no. 1, pp. 30-36, Jan. 2004.
2. J. Park, N. Suganuma, and Y. Kawakami, BDual partial dye doping for chromaticity tuning and performance enhancement of white OLEDs,[ J. Display Technol., vol. 4, no. 1, pp. 61-69, Mar. 2008.
3. B. W. D'Andrade and S. R. Forrest, BWhite organic light-emitting devices for solid-state lighting,[ Adv. Mater., vol. 16, no. 18, pp. 1585-1595, Sep. 2004.
4. T. Earmme, E. Ahmed, and S. A. Jenekhe, BHighly efficient phosphorescent light-emitting diodes by using an electrontransport material with high electron affinity,[ J. Phys. Chem. C, vol. 113, no. 43, pp. 18 448-18 450, Oct. 2009.
5. A. Köhler, J. S. Wilson, and R. H. Friend, BFluorescence and phosphorescence in organic materials,[ Adv. Mater., vol. 14, no. 10, pp. 701-707, May 2002.
6. P. O. Ruden and D. L. Smith, BTheory of spin injection into conjugated organic semiconductors,[ J. Appl. Phys., vol. 95, no. 9, pp. 4898-4904, Feb. 2004.
7. J. Wilkinson, A. H. Davis, K. Bussmann, and J. P. Long, BEvidence for charge-carrier mediated magnetic-field modulation of electroluminescence in organic light-emitting diodes,[ Appl. Phys. Lett., vol. 86, no. 11, pp. 111109-1- 111109-3, Mar. 2005.
8. E. Shikoh, T. Kawai, A. Fujiwara, Y. Ando, and T. J. Miyazaji, BSpin injection into organic light-emitting diodes with a ferromagnetic cathode and observation of the luminescence properties,[ J. Magn. Magn. Mater., vol. 310, no. 2, pp. 2052-2054, Nov. 2006.
9. D. Wu, Z. H. Xiong, X. G. Li, Z. V. Vardeny, and J. Shi, BMagnetic-field-dependent carrier injection at La2=3Sr1=3MnO3= and organic semiconductors interfaces,[ Phys. Rev. Lett., vol. 95, no. 1, pp. 016802-1-016802-5, Jul. 2005.
10. B. F. Ding, Y. Q. Zhan, Z. Y. Sun, X. M. Ding, X. Y. Hou, Y. Z. Wu, I. Bergenti, and V. Dediu, BElectroluminescence and magnetoresistance of the organic light-emitting diode with a La0:7Sr0:3MnO3 anode,[ Appl. Phys. Lett., vol. 93, no. 18, pp. 183307-1-183307-3, Nov. 2008.
11. E. Shikoh, A. Fujiwara, Y. Ando, and T. Miyazaki, BSpin injection into organic light-emitting devices with ferromagnetic cathode and effects on their luminescence properties,[ Jpn. J. Appl. Phys., vol. 45, no. 9A, pp. 6897-6901, Sep. 2006.
12. J. Kalinowski, M. Cocchi, D. Virgili, P. D. Marco, and V. Fattori, BMagnetic field effects on emission and current in Alq3- based electroluminescent diodes,[ Chem. Phys. Lett., vol. 380, no. 5/6, pp. 710-715, Oct. 2003.
13. H. Odaka, Y. Okimoto, T. Yamada, H. Okamoto, M. Kawasaki, and Y. Tokura, BControl of magnetic-field effect on electroluminescence in Alq3-based organic light emitting diodes,[ Appl. Phys. Lett., vol. 88, no. 12, pp. 123501-1- 123501-3, Mar. 2006.
14. C. Gärditz, A. G. Mückl, and M. J. Cölle, BInfluence of an external magnetic field on the singlet and triplet emissions of tris-(8-hydroxyquinoline) aluminum (III) (Alq),[ J. Appl. Phys., vol. 98, no. 10, pp. 104507-1-104507-4, Nov. 2005.
15. D. D. Zhang, J. Feng, Y. F. Liu, Y. Q. Zhong, Y. Bai, Y. Jin, G. H. Xie, Q. Xue, Y. Zhao, S. Y. Liu, and H. B. Sun, BEnhanced hole injection in organic light-emitting devices by using Fe3O4 as an anodic buffer layer,[ Appl. Phys. Lett., vol. 94, no. 22, pp. 223306-1-223306-3, Jun. 2009.
16. D. D. Zhang, J. Feng, H. Wang, Y. Bai, Q. D. Chen, S. Y. Liu, and H. B. Sun, BImproved hole injection and transport of organic light-emitting devices with an efficient p-doped hole-injection layer,[ Appl. Phys. Lett., vol. 95, no. 26, pp. 263303-1-263303-3, Dec. 2009.
17. J. Feng, D. D. Zhang, Y. F. Liu, Y. Bai, Q. D. Chen, S. Y. Liu, and H. B. Sun, BMagnetic nanofilm of Fe3O4 for highly efficient organic light-emitting devices,[ J. Phys. Chem. C, vol. 114, no. 14, pp. 6718-6721, Mar. 2010.
18. P. Desai, P. Shakya, T. Kreouzis, and W. P. Gillin, BThe role of magnetic fields on the transport and efficiency of aluminum tris(8-hydroxyquinoline) based organic light emitting diodes,[ J. Appl. Phys., vol. 102, no. 7, pp. 073710-1- 073710-5, Oct. 2007.
19. P. Desai, P. Shakya, T. Kreouzis, and W. P. Gillin, BMagnetoresistance and efficiency measurements of Alq3-based OLEDs,[ Phys. Rev. B, Condens. Matter, vol. 75, no. 9, pp. 094423-1-094423-6, Mar. 2007.
20. F. X. Wang, X. F. Qiao, T. Xiong, and D. G. Ma, BThe role of molybdenum oxide as anode interfacial modification in the improvement of efficiency and stability in organic light-emitting diodes,[ Org. Electron., vol. 9, no. 6, pp. 985-993, Dec. 2008.
21. B. Hu and Y. Wu, BTuning magnetoresistance between positive and negative values in organic semiconductors,[ Nat. Mater., vol. 6, no. 12, pp. 985-991, Dec. 2007.
22. L. Xin, C. Li, F. Li, S. Liu, and B. Hu, BInversion of magnetic field effects on electrical current and electroluminescence in tri-(8- hydroxyquinoline)-aluminum based light-emitting diodes,[ Appl. Phys. Lett., vol. 95, no. 12, pp. 123306-1- 123306-3, Sep. 2009.
23. M. Fonin, R. Pentcheva, Y. S. Dedkov, M. Sperlich, D. V. Vyalikh, M. Scheffler, U. Rüdiger, and G. Güntherodt, BSurface electronic structure of the Fe3O4(100): Evidence of a half-metal to metal transition,[ Phys. Rev. B, Condens. Matter, vol. 72, no. 10, pp. 104436-1-104436-3, Sep. 2005.