Optical identification of Mo related deep level defect in 4H and 6H SiC

Materials Science Forum

Volumn 615 617, Issue , 2009, Pages 405-408

  Gällström, Andreas ^a   Magnusson, Björn ^a,b   Janzén, Erik ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b Norstel AB   (Sweden)

Author keywords

FTIR; I 1

Indexed keywords

DEFECTS; ENERGY GAP; EXCITED STATES; GROUND STATE; MAGNETIC RESONANCE; SILICON CARBIDE;

BAND-GAP EXCITATION; DEEP-LEVEL DEFECTS; ELECTRON STRUCTURES; ELECTRONIC CONFIGURATION; FTIR; OPTICAL IDENTIFICATION; PL MEASUREMENTS; RESONANCE TECHNIQUE;

MOLYBDENUM;

EID: 79251585950     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.615-617.405     Document Type: Conference Paper

References (3)

1. B. Magnusson, and E. Janzén, Mat. Sci. Forum Vols. 483-485 (2005), p. 341 doi:10.4028/www.scientific.net/MSF.483-485.341.
2. J. Baur, M. Kunzer, and J. Schneider, Phys. Stat. Sol. (a) Vol. 162 (1997), p. 153 doi:10.1002/1521-396X(199707)162:1<153::AID-PSSA153>3.0. CO;2-3.
3. E. Janzén, A. Gali, A. Henry, I. G. Ivanov, B. Magnusson and N. T. Son, in Defects in Microelectronic Materials and Devices, chapter 21: Defects in SiC, Eds D. M. Fleetwood, S. T. Pantelides, and R. D. Schrimpf, CRC Press LLC, in press.