Preparation and characterization of Cu(In,Ga)(Se,S) 2 films without selenization by co-sputtering from Cu(In,Ga)Se 2 quaternary and In 2 S 3 targets

Applied Surface Science

Volumn 257, Issue 9, 2011, Pages 4278-4284

  Lin, Y C ^a   Ke, J H ^a   Yen, W T ^a   Liang, S C ^b   Wu, C H ^b   Chiang, C T ^b  

^a NATIONAL CHANGHUA UNIVERSITY OF EDUCATION   (Taiwan)

^b CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Co sputter process; One stage annealing

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; COPPER COMPOUNDS; ENERGY GAP; INDIUM SULFIDE; LIME; SEMICONDUCTING FILMS; STOICHIOMETRY; THIN FILMS;

ANNEALING PROCESS; CU(IN ,GA)(SE ,S)2; P TYPE CONDUCTIVITY; RADIO FREQUENCIES; SPUTTER PROCESS; STOICHIOMETRY RATIO; SUBSTRATE TEMPERATURE; WORKING PRESSURES;

FILM PREPARATION;

EID: 78951480806     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2010.12.036     Document Type: Article

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