Atomistic modeling of the phonon dispersion and lattice properties of free-standing 〈100〉 Si nanowires

2010 14th International Workshop on Computational Electronics, IWCE 2010

Volumn , Issue , 2010, Pages 283-286

  Paul, Abhijeet ^a   Luisier, Mathieu ^a   Klimeck, Gerhard ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMISTIC MODELING; FORCE CONSTANTS; PHONON CONFINEMENT; PHONON DISPERSIONS; SECTION SIZE; SI NANOWIRE; SILICON NANOWIRES; SOUND VELOCITIES; SURFACE-TO-VOLUME RATIO; THERMAL CONDUCTANCE; VALENCE FORCE FIELDS;

ACOUSTIC DISPERSION; ELECTRONICS ENGINEERING; IONIC CONDUCTION; NANOWIRES; STRAIN MEASUREMENT;

PHONONS;

EID: 78751695303     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWCE.2010.5677959     Document Type: Conference Paper

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