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Volumn 54, Issue 1, 2011, Pages 52-57

Photoluminescence properties of ZnSe1-x Te x thin films on GaAs/ITO substrates by electron beam evaporation technique

Author keywords

electron beam evaporation; photoluminescence; semiconducting II VI materials; ZnSeTe

Indexed keywords

ELECTRON BEAMS; ENERGY GAP; GALLIUM ARSENIDE; II-VI SEMICONDUCTORS; III-V SEMICONDUCTORS; LIGHT; OPTOELECTRONIC DEVICES; OXIDE FILMS; PHOTOLUMINESCENCE; PHOTOLUMINESCENCE SPECTROSCOPY; PHYSICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM; SEMICONDUCTOR ALLOYS; SEMICONDUCTOR QUANTUM WELLS; SULFUR COMPOUNDS; THIN FILMS; TIN OXIDES; WIDE BAND GAP SEMICONDUCTORS; ZINC SELENIDE; ZINC SULFIDE;

EID: 78651490671     PISSN: 16747321     EISSN: 18691900     Source Type: Journal    
DOI: 10.1007/s11431-010-4186-y     Document Type: Article
Times cited : (5)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.