The compound oxides based on TiO2and NiO thin films for low temperature gas detection

Conference Proceedings - The 8th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010

Volumn , Issue , 2010, Pages 337-340

  Kosc, I ^a   Hotovy, I ^a   Kompitsas, M ^c   Grieseler, R ^b   Wilke, M ^b   Rehacek, V ^a   Predanocy, M ^a   Kups, T ^b   Spiess, L ^b  

^a SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

^b ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^c THEORETICAL AND PHYSICAL CHEMISTRY INSTITUTE   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; DC MAGNETRON SPUTTERING TECHNIQUE; ENHANCED SENSITIVITY; FAST RESPONSE; GAS DETECTION; GAS SENSING PROPERTIES; LOW OPERATING TEMPERATURE; LOW TEMPERATURES; METAL OXIDES; NIO THIN FILM; NOBLE METAL CATALYSTS; TIO; VAN DER PAUW METHOD; XRD;

CATALYSTS; ELECTRIC PROPERTIES; FILM PREPARATION; GAS DETECTORS; INERT GASES; MICROSYSTEMS; MULTILAYER FILMS; PRECIOUS METALS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR SWITCHES; THIN FILMS;

GAS SENSING ELECTRODES;

EID: 78651450873     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ASDAM.2010.5666355     Document Type: Conference Paper

References (4)

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