A low-power 60GHz receiver front-end with a variable-gain LNA in SiGe BiCMOS technology

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 2010, Pages 192-195

  Sun, Yaoming ^a   Scheytt, Christoph J ^a  

^a IHP   (Germany)

Author keywords

60 GHz; LNA; Low power; Mixer; Receiver front end; Silicon bipolar BiCMOS

Indexed keywords

60 GHZ; LNA; LOW POWER; MIXER; RECEIVER FRONT-ENDS; SILICON BIPOLAR/BICMOS;

BICMOS TECHNOLOGY; MIXERS (MACHINERY); MIXING; SEMICONDUCTING SILICON;

DC POWER TRANSMISSION;

EID: 78651391642     PISSN: 10889299     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/BIPOL.2010.5668052     Document Type: Conference Paper

References (5)

1. Scott K. Reynolds et al., "A Silicon 60-GHz Receiver and Transmitter Chipset for Broadband Communications", IEEE Journal of Solid-state Circuits, Vol. 41, No, 12, pp. 2820-2830, December 2006.
2. Yaoming Sun et al., "An Integrated 60 GHz Transceiver Front-End for OFDM in SiGe:BiCMOS", Proc. of 16th Wireless World Research Forum (WWRF16), Shanghai, China, Apr. 2006.
3. Behzad Razavi, "A 60-GHz CMOS Front-end," IEEE Journal of Solid State Circuits, Vol. 41, No. 1, Jan. 2006. pp. 17-22.
4. Toshiya Mitomo et al., "A 60-GHz CMOS Receiver Front-End With Frequency Synthesizer", IEEE Journal of Solid State Circuits, Vol. 43, No. 4, April, 2008. pp. 1030-1037.
5. Christopher Weyers et al., "A 22.3dB Voltage Gain 6.1dB NF 60GHz LNA in 65nm CMOS with Differential Output", IEEE Solid State Circuit Conference (ISSCC), 2008, pp. 192-193.