A 91 to 110-GHz tapered constructive wave power amplifier in a 0.12μm SiGe BiCMOS process

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 2010, Pages 125-128

  Kalantari, Nader ^a   Buckwalter, James F ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MAXIMUM GAIN; SIGE BICMOS; SIGE BICMOS TECHNOLOGY;

POWER AMPLIFIERS; SEMICONDUCTING SILICON; SILICON ALLOYS; WAVE POWER;

BICMOS TECHNOLOGY;

EID: 78651385692     PISSN: 10889299     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/BIPOL.2010.5667917     Document Type: Conference Paper

References (6)

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2. A. Komijani and A. Hajimiri, "A Wideband 77GHz, 17.5dBm Power Amplifier in silicon," in Proc. Custom Integrated Circuits Conference the IEEE 2005, 18-21 Sept. 2005, pp. 571-574.
3. S. T. Nicolson, K. A. Tang, K. H. K. Yau, P. Chevalier, B. Sautreuil, and S. P. Voinigescu, "A Low-Voltage 77-GHz Automotive Radar Chipset," in Proc. IEEE/MTT-S International Microwave Symposium, 3-8 June 2007, pp. 487-490.
4. M. Chang and G. M. Rebeiz, "A Wideband High-Efficiency 79-97 GHz SiGe Linear Power Amplifier with >90 mw output," in Proc. IEEE Bipolar/BiCMOS Circuits and Technology Meeting BCTM 2008, 13-15 Oct. 2008, pp. 69-72.
5. J. F. Buckwalter and J. Kim, "A 26dB-gain 100GHz Si/SiGe Cascaded Constructive-Wave Amplifier," in Proc. IEEE International Solid-State Circuits Conference - Digest of Technical Papers ISSCC 2009, 8-12 Feb. 2009, pp. 488-489,489a.
6. Y.-S. Jiang, J.-H. Tsai, and H. Wang, "A W-Band Medium Power Amplifier in 90 nm CMOS," MWCL, vol. 18, no. 12, pp. 818-820, Dec. 2008.