High efficieny and long-term stability of nanocrystalline silicon based devices

IEEE International Conference on Group IV Photonics GFP

Volumn , Issue , 2010, Pages 219-221

  Marconi, A ^a   Anopchenko, A ^a   Puker, G ^b   Pavesi, L ^a  

^a UNIVERSITY OF TRENTO   (Italy)

^b ITC IRST   (Italy)

Author keywords

Band gap engineering; Device stability; High efficiency

Indexed keywords

BAND GAP ENGINEERING; DEVICE STABILITY; ENERGY BANDGAPS; HIGH EFFICIENCY; LONG TERM STABILITY; OPTO-ELECTRONICS; SILICON NANOCRYSTALS; STORAGE TIME;

ENERGY GAP; NANOCRYSTALLINE SILICON; NANOCRYSTALS;

PHOTONICS;

EID: 78651350312     PISSN: 19492081     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/GROUP4.2010.5643375     Document Type: Conference Paper

References (4)

1. A. Anopchenko, A. Marconi, E. Moser, S. Prezioso, M. Wang, G. Pucker, P. Bellutti, and L. Pavesi, "Low-voltage onset of electroluminescence in nc-Si/SiO2 multilayers," J. Appl. Phys. 106, 033104 (2009).
2. A. Marconi, A. Anopchenko, M. Wang, G. Pucker, P. Bellutti, and L. Pavesi, "High power efficiency in Si-nc/SiO2 multilayer light emitting devices by bipolar direct tunneling," Appl. Phys. Lett. 94, 221110 (2009).
3. B. Gelloz and N. Koshida in Device Applications of Silicon Nanocrystals and Nanostructures, edited by N. Koshida, Springer, New York, 2009.
4. M. Wang, A. Anopchenko, A. Marconi, E. Moser, S. Prezioso, L. Pavesi, G. Pucker, P. Bellutti, and L. Vanzetti, "Light emitting devices based on nanocrystalline-silicon multilayer structure," Physica E. 41, 912 (2009).