Self consistent parameterized physical MTJ compact model for STT-RAM

Proceedings of the International Semiconductor Conference, CAS

Volumn 2, Issue , 2010, Pages 423-426

  Nigam, Anurag ^a   Munira, Kamaram ^a   Ghosh, Avik ^a   Wolf, Stu ^a   Chen, Eugene ^b   Stan, Mircea R ^a  

^a UNIVERSITY OF VIRGINIA   (United States)

^b Grandis Inc   (United States)

Author keywords

Compact circuit model; MTJ; STT RAM

Indexed keywords

CIRCUIT MODELS; COMPACT MODEL; EXPERIMENTAL DATA; LANDAU-LIFSHITZ-GILBERT; MAGNETIC TUNNEL JUNCTION; MODEL RESULTS; MTJ; PARAMETERIZED; STEADY STATE PROPERTIES; STT-RAM; TRANSIENT CHARACTERISTIC; TUNNEL CURRENTS;

CIRCUIT THEORY; DIFFERENTIAL EQUATIONS; TUNNEL JUNCTIONS;

MAGNETIC DEVICES;

EID: 78651104421     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SMICND.2010.5650558     Document Type: Conference Paper

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