Atomic layer deposition goes mainstream in 22nm logic technologies

Solid State Technology

Volumn 53, Issue 10, 2010, Pages 18-21

  Verghese, M ^a,b,c   Maes, J W ^d,e   Kobayashi, N ^f,g  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^b Chemical Engineering from the U of Arizona   (United States)

^c ASM AMERICA   (United States)

^d DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^e ASM   (Belgium)

^f UNIVERSITY OF TOKYO   (Japan)

^g Tama in Tokyo   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BATCH SYSTEMS; COST-EFFICIENT; HIGH-VOLUME MANUFACTURING; LOGIC PROCESS; LOGIC TECHNOLOGY; MANUFACTURING EQUIPMENT; MULTIPLE AREAS; SINGLE WAFER; TECHNOLOGY ADOPTION; TECHNOLOGY VARIATIONS; TOOLSETS;

ATOMIC LAYER DEPOSITION; MANUFACTURE; TECHNOLOGY;

PROCESS CONTROL;

EID: 78650733536     PISSN: 0038111X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article

References (6)

1. C. Goodman, et al., "Atomic Layer Epitaxy," Jour. of Appl. Physics, R65-R81, 1986.
2. D. Triyoso, et al., "Physical and Electrical Characteristics of Atomic-LayerDeposited Hafnium Oxide Formed Using Hafnium Tetrachloride and Tet rakis(ethylmethylaminohafnium)," Jour, of Appl. Physics, Vol. 97,124107, 2005.
3. H. P. W. Hey et. al., "Ion Bombardment: A Determining Factor in Plasma CVD," Solid State Technology, pp. 139-144, April, 1990.
4. L. Niinistö, et. al., "Advanced Electronic and Optoelectronic Materials by Atomic Layer Deposition: An Overview with Special Emphasis on Recent Progress in Processing of High-κ Dielectrics and Other Oxide Materials," Physica Status Solidi (a), 201, p. 1443-1452,2004
5. E. Granneman, et al., Batch ALD: Characteristics, Comparison with Single-wafer ALD, and Examples, Surface and Coatings Technology, Vol. 201, p. 8899 - 8907,2007.
6. th Inter. Conf. on Atomic Layer Deposition, p. 31,2010.