Effect of 100MeV O7+ ion beam irradiation on structural, optical and electronic properties of SnO2 thin films

Radiation Effects and Defects in Solids

Volumn 165, Issue 12, 2010, Pages 930-937

  Sharma, Aditya ^a   Verma, K D ^a   Varshney, Mayora ^a   Singh, Devendra ^b   Singh, Moti ^c   Asokan, K ^d   Kumar, Ravi ^a  

^a S V College   (India)

^b S S L D Varshney Girls Engineering College   (India)

^c INTER UNIVERSITY ACCELERATOR CENTRE   (India)

^d NATIONAL INSTITUTE OF TECHNOLOGY   (India)

Author keywords

AFM; irradiation; SnO2; swift heavy ion; thin films; XRD

Indexed keywords

AFM; BAND GAP ENERGY; ELECTRICAL RESISTIVITY; FLUENCES; ION BEAM IRRADIATION; IRRADIATED SAMPLES; OPTICAL AND ELECTRONIC PROPERTIES; PEAK INTENSITY; PULSED-LASER DEPOSITION TECHNIQUE; SNO2; SWIFT HEAVY IONS; TEMPERATURE-DEPENDENT RESISTIVITY; UV-VISIBLE ABSORPTION; XRD;

ATOMIC FORCE MICROSCOPY; DEPOSITION; ELECTRIC CONDUCTIVITY; HEAVY IONS; ION BEAMS; IRRADIATION; PULSED LASER DEPOSITION; RADIATION; THIN FILMS; VAPOR DEPOSITION; X RAY DIFFRACTION;

ELECTRONIC PROPERTIES;

EID: 78650612963     PISSN: 10420150     EISSN: 10294953     Source Type: Journal    
DOI: 10.1080/10420150.2010.514687     Document Type: Article

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