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Volumn 151, Issue 2, 2011, Pages 139-143
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Structural, electronic and magnetic properties of the 3d transition metal-doped GaN nanotubes
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Author keywords
A. GaN nanotubes; A. Transition metal atoms; C. Impurities in semiconductors; E. Density functional theory
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Indexed keywords
3D TRANSITION;
3D TRANSITION METALS;
C. IMPURITIES IN SEMICONDUCTORS;
DENSITY FUNCTIONALS;
ELECTRONIC AND MAGNETIC PROPERTIES;
FIRST-PRINCIPLES CALCULATION;
GALLIUM NITRIDE NANOTUBES;
GAN NANOTUBES;
HALF METALS;
HUND'S RULE;
NANOMAGNETS;
NI-DOPED;
SPINTRONICS;
TM-DOPED;
TOTAL DENSITY OF STATE;
TRANSITION METAL ATOMS;
DENSITY FUNCTIONAL THEORY;
GALLIUM ALLOYS;
GALLIUM NITRIDE;
IMPURITIES;
MAGNETIC MOMENTS;
MAGNETIC PROPERTIES;
MANGANESE;
METALS;
NANOTUBES;
SPIN DYNAMICS;
CHROMIUM;
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EID: 78650514629
PISSN: 00381098
EISSN: None
Source Type: Journal
DOI: 10.1016/j.ssc.2010.11.002 Document Type: Article |
Times cited : (24)
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References (35)
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