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Volumn 46, Issue 12, 2010, Pages 1290-1295

Photoelectric properties of ordered-vacancy Ga 2Se 3 single crystals

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EID: 78650504249     PISSN: 00201685     EISSN: 16083172     Source Type: Journal    
DOI: 10.1134/S0020168510120034     Document Type: Article
Times cited : (10)

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    • 1:CAS:528:DyaK2MXks1OrurY%3D
    • B.I. Sysoev N.N. Bezryadin G.I. Kotov, et al. 1995 Passivation of the GaAs (100) Surface with (110) Gallium Chalcogenides Fiz. Tekh. Poluprovodn. (S.-Peterburg) 29 1 24 32 1:CAS:528:DyaK2MXks1OrurY%3D
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    • Abdal-Rahman, M.1    Shaikh, H.A.2
  • 14
    • 0000447191 scopus 로고
    • Lattice Dynamics of Tetrahedrally Bonded Semiconductors Containing Ordered Vacant Sites
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.