FDTD simulation of light propagation inside a-Si:H structures

Materials Research Society Symposium Proceedings

Volumn 1245, Issue , 2010, Pages 311-316

  Fantoni, A ^a,b   Pinho, P ^a,c  

^a INSTITUTO SUPERIOR DE ENGENHARIA DE LISBOA   (Portugal)

^b UNINOVA   (Portugal)

^c INSTITUTO DE TELECOMUNICAÇÕES   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; FINITE DIFFERENCE TIME DOMAIN METHOD; LIGHT ABSORPTION; LIGHT PROPAGATION; LIGHT TRANSMISSION; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DOPING; SOLAR CELLS; TIME DOMAIN ANALYSIS;

ABSORPTION CO-EFFICIENT; FINITE-DIFFERENCE TIME-DOMAIN ALGORITHMS; LIGHT-SEMICONDUCTOR INTERACTIONS; PHOTO-VOLTAIC EFFICIENCY; PROPAGATION OF ELECTROMAGNETIC WAVES; SEMICONDUCTOR INTERFACES; SEMICONDUCTOR STRUCTURE; SURFACE AND INTERFACES;

LIGHT REFLECTION;

EID: 78650411610     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-1245-a15-04     Document Type: Conference Paper

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