Detrapping and retrapping of free carriers in nominally pure single crystal GaP, GaAs, and 4H-SiC semiconductors under light illumination at cryogenic temperatures

Journal of Applied Physics

Volumn 108, Issue 10, 2010, Pages

  Mouneyrac, David ^a,b   Hartnett, John G ^a   Le Floch, Jean Michel ^a   Tobar, Michael E ^a   Cros, Dominique ^b   Krupka, Jerzy ^c  

^a UNIVERSITY OF WESTERN AUSTRALIA   (Australia)

^b Centre National de la Recherche Scientifique   (France)

^c WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

4H SILICON CARBIDE; BAND TRANSITIONS; CRYOCOOLERS; CRYOGENIC TEMPERATURES; DARK CONDITIONS; DE-TRAPPING; FREE CARRIERS; GAAS; HIGH PURITY; IONIZATION ENERGIES; LIGHT ILLUMINATION; MEASURED DATA; MICROWAVE LOSS; MICROWAVE PROPERTY; PARTS PER MILLIONS; PHENOMENOLOGICAL MODELS; Q-FACTORS; RETRAPPING; SEMICONDUCTOR BAND GAP; SENSITIVE MEASUREMENT; SINGLE STAGE; SINGLE-CRYSTAL SEMICONDUCTORS; WHISPERING GALLERY MODES;

CRYOGENIC EQUIPMENT; CRYOGENICS; ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM ARSENIDE; GALLIUM PHOSPHIDE; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON; SILICON CARBIDE; SINGLE CRYSTALS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 78650283235     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3514009     Document Type: Conference Paper

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