-
1
-
-
78650148064
-
From the valley of death to the golden decade: Crystalline silicon solar cells from 10 μm to 100 μm
-
Aug.
-
S. Bowden, "From the Valley of Death to the Golden Decade: Crystalline Silicon Solar Cells from 10 μm to 100 μm," Proc. 19th Workshop Cryst. Si. Solar Cells and Modules, p. 192, Aug. 2009.
-
(2009)
Proc. 19th Workshop Cryst. Si. Solar Cells and Modules
, pp. 192
-
-
Bowden, S.1
-
2
-
-
78650157176
-
-
U.S. Patent Appl. No. 20090280635, May 15
-
L. Mathew, et al., U.S. Patent Appl. No. 20090280635, May 15, 2009.
-
(2009)
-
-
Mathew, L.1
-
4
-
-
22744457137
-
20.1%-efficient crystalline silicon solar cell with amorphous silicon rear-surface passivation
-
June
-
M. Schaper, et al., "20.1%-efficient Crystalline Silicon Solar Cell with Amorphous Silicon Rear-surface Passivation," Prog. Photovol.: Res. Appl., 13, p. 381, June 2005.
-
(2005)
Prog. Photovol.: Res. Appl.
, vol.13
, pp. 381
-
-
Schaper, M.1
-
5
-
-
62449237596
-
A-Si/c-Si heterojunction for interdigitated back contact solar cell
-
M. Lu, et al., "a-Si/c-Si Heterojunction for Interdigitated Back Contact Solar Cell" Proc. 22nd Euro. Photovolt. Solar Energy Conf., p. 924, 2007.
-
(2007)
Proc. 22nd Euro. Photovolt. Solar Energy Conf.
, pp. 924
-
-
Lu, M.1
-
6
-
-
0000016888
-
Continuum-based modeling of silicon integrated circuit processing: An object-oriented approach
-
Aug.
-
M. E. Law and S. Cea, "Continuum-Based Modeling of Silicon Integrated Circuit Processing: An Object-Oriented Approach," Computational Materials Science, 12 (1), p. 289, Aug. 1998.
-
(1998)
Computational Materials Science
, vol.12
, Issue.1
, pp. 289
-
-
Law, M.E.1
Cea, S.2
-
7
-
-
0019608018
-
An analytic model for minority-carrier transport in heavily doped regions of silicon devices
-
Sept.
-
J. G. Fossum and M. A. Shibib, "An Analytic Model for Minority-Carrier Transport in Heavily Doped Regions of Silicon Devices," IEEE Trans. Electron Devices, ED-28, p. 1018, Sept. 1981.
-
(1981)
IEEE Trans. Electron Devices
, vol.ED-28
, pp. 1018
-
-
Fossum, J.G.1
Shibib, M.A.2
-
8
-
-
0001035051
-
Surface recombination velocity of highly doped n-type silicon
-
Sept. 15
-
A. Cuevas, et al., "Surface Recombination Velocity of Highly Doped n-Type Silicon," J. Appl. Phys., 80 (6), p. 3370, Sept. 15, 1996.
-
(1996)
J. Appl. Phys.
, vol.80
, Issue.6
, pp. 3370
-
-
Cuevas, A.1
-
9
-
-
0020169639
-
A physical model for the dependence of carrier lifetime on doping density in nondegenerate silicon
-
Aug.
-
J. G. Fossum and D. S. Lee, "A Physical Model for the Dependence of Carrier Lifetime on Doping Density in Nondegenerate Silicon," Solid-State Electron., 25, p. 741, Aug. 1982.
-
(1982)
Solid-state Electron.
, vol.25
, pp. 741
-
-
Fossum, J.G.1
Lee, D.S.2
-
10
-
-
11544267860
-
+ back-surface-field silicon solar cells
-
Aug. 1
-
+ Back-Surface-Field Silicon Solar Cells," Appl. Phys. Lett., 33 (3), p. 238, Aug. 1, 1978.
-
(1978)
Appl. Phys. Lett.
, vol.33
, Issue.3
, pp. 238
-
-
Fossum, J.G.1
Burgess, E.L.2
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