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Volumn , Issue , 2010, Pages 1427-1431

High performance solar cells made from 100% umg silicon obtained via the photosil process

Author keywords

[No Author keywords available]

Indexed keywords

BORON CONCENTRATIONS; BORON-DOPED; CELL PROCESS; GLOW DISCHARGE MASS SPECTROSCOPIES; HIGH EFFICIENCY; IDENTICAL CONDITIONS; IMPURITY CONTENT; MATERIAL YIELD; MAXIMUM EFFICIENCY; METALLIC IMPURITY; METALLURGICAL-GRADE SILICON; MULTI-CRYSTALLINE SILICON; P-TYPE; PHOSPHORUS CONCENTRATION; PHOTOVOLTAIC PERFORMANCE; PLASMA TREATMENT; PRODUCTION COST; SCREEN-PRINTED; SILICON FEEDSTOCKS; SOLAR CELL EFFICIENCIES;

EID: 78650152368     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2010.5614418     Document Type: Conference Paper
Times cited : (31)

References (9)
  • 1
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    • New processes for the production of solar-grade polycrystalline silicon: A review
    • A.F.B. Braga, et al., "New processes for the production of solar-grade polycrystalline silicon: A review", Sol. Energy Mater. Sol. Cells 92, 2007, pp. 418-424.
    • (2007) Sol. Energy Mater. Sol. Cells , vol.92 , pp. 418-424
    • Braga, A.F.B.1
  • 2
    • 77951582416 scopus 로고    scopus 로고
    • Doping engineering as a method to increase the performance of purified MG silicon during ingot crystallization
    • th IEEE PVSC, 2009, pp. 1327-1330.
    • (2009) th IEEE PVSC , pp. 1327-1330
    • Kraiem, J.1
  • 3
    • 80052280752 scopus 로고    scopus 로고
    • Processing of umg-Si Solar Cells with 16% Efficiency in pilot production
    • th EUPVSEC, 2009.
    • (2009) th EUPVSEC
    • Kaes, M.1
  • 4
    • 78650115446 scopus 로고    scopus 로고
    • Segregation and crystallization of purified metallurgical grade silicon : Influence of process parameters on yield and solar cell efficiency
    • to be presented
    • th EUPVSEC, 2010, to be presented.
    • (2010) th EUPVSEC
    • Drevet, B.1
  • 5
    • 67249154977 scopus 로고    scopus 로고
    • Future potential for SoG Si feedstock from the metallurgical route
    • rd EUPVSEC, 2008, pp 947-950.
    • (2008) rd EUPVSEC , pp. 947-950
    • Peter, K.1
  • 6
    • 78650163894 scopus 로고    scopus 로고
    • Beneficial effects of dopant compensation on carrier lifetime in upgraded metallurgical silicon
    • rd EUPVSEC, 2008, pp 1445-1448.
    • (2008) rd EUPVSEC , pp. 1445-1448
    • Dubois, S.1
  • 7
    • 78650091845 scopus 로고    scopus 로고
    • Light induced degradation and regeneration in compensated upgraded metallurgical silicon
    • rd EUPVSEC, 2008, pp 1437-1440.
    • (2008) rd EUPVSEC , pp. 1437-1440
    • Dubois, S.1
  • 8
    • 78650155685 scopus 로고    scopus 로고
    • Characterizing device efficiency potential from industrial multi-crystalline cell structures composed of solar grade silicon
    • rd EUPVSEC, 2008, pp 1218-1224.
    • (2008) rd EUPVSEC , pp. 1218-1224
    • Good, E.1
  • 9
    • 80052078624 scopus 로고    scopus 로고
    • Innovative crystallization process and furnace for solar grade silicon
    • nd EUPVSEC, 2007, pp. 948 - 951.
    • (2007) nd EUPVSEC , pp. 948-951
    • Lissalde, F.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.